Recently, Zhongdian and FAW jointly promoted technological innovation in silicon carbide power devices and modules. The first 750V silicon carbide power chip developed has completed sample casting, and the first domestically produced 1200V plastic encapsulated 2in1 silicon carbide power module has completed A-sample trial production.

As the representative of the third-generation wide band gap semiconductor materials, silicon carbide has significant advantages in band gap width, breakdown electric field, thermal conductivity, electronic saturation rate and other indicators, which can meet the needs of modern industry for high power, high voltage, and high frequency. Downstream applications include intelligent power grid, new energy vehicles, photovoltaic wind power, 5G communication, etc. Institutional analysis indicates that the downstream demand for silicon carbide is constantly expanding, and the market space of tens of billions of yuan is available. According to calculations, the global demand for silicon carbide substrates will reach 18.84 billion yuan in 2025, and the demand for silicon carbide devices will reach 62.78 billion yuan.

According to the Cailian News Agency theme database, among the relevant listed companies:

Meggitt‘s joint venture company, Zhanxin Electronics, is committed to the industrialization of silicon carbide power devices and supporting chips. It is the first company in China to independently develop and master 6-inch SiCMOS FET products and process platforms.

Shengmei Shanghai has launched a 6/8-inch compound semiconductor wet process product line to support process applications in the compound semiconductor field, including silicon carbide (SiC), gallium nitride (GaN), and gallium arsenide (GaAs).