In 2023, whether it is new forces such as Xiaopeng, NIO, Nezha, or top 10 automakers such as FAW, SAIC, Geely, Chery, and BYD, the entire automotive industry is actively introducing silicon carbide technology. Especially FAW Hongqi, they launched four major actions in the first quarter of this year, achieving the leading position in SiC technology for car specifications:
● Release SiC hybrid platform HMP with a comprehensive efficiency of over 90%;
Completed the trial production of the main drive silicon carbide module, using 2in1 plastic packaging;
Adopting national production of 1200V SiC MOSFET, with a specific conduction resistance of 3.15m Ω · cm ²。
Recently, FAW Hongqi has made new breakthroughs in the field of silicon carbide.
On April 14th, the official WeChat account of "Hongqi R&D New Horizon" announced that FAW‘s first 750V silicon carbide power chip for electric drive had completed sample casting on April 10th, officially entering the product level testing phase.http://www.ic-bom.com/
According to the report, the chip was jointly developed by the Power Electronics Development Department of the New Energy Development Institute of Hongqi Research and Development Institute and the 55 Institute of China Electronics Technology. Hongqi Company stated that the successful development of the chip sample is of milestone significance for Hongqi to build a national power chip resource chain and achieve high-quality and low-cost application of silicon carbide power chips for electric drive.http://www.ic-bom.com/
According to reports, the development department of Hongqi Power Electronics, in collaboration with the 55 Institute of China Electronics Technology, has carried out technical research from the dimensions of structural design, process technology, and material application, resulting in a specific on-resistance of 2.15m Ω · cm for the chip ²， The maximum working junction temperature is 175 ℃, reaching the international advanced level.
It is reported that the chip uses domestically produced low defect substrate materials and high uniformity epitaxial materials, further reducing the failure probability of silicon carbide power chips and improving chip reliability; The application of surface metal layer materials that can support the silver sintering process greatly improves the heat dissipation effect of the chip and supports stable and safe operation at high temperatures.http://www.ic-bom.com/
