Recently, two new projects have been added in the SiC field, with coordinates in Jinan, Shandong and South Korea:

Nan Sha Wafer: The SiC expansion base project is planned to land in Jinan, with an annual production capacity of 1 million pieces;http://www.ic-bom.com/

Eastern High Tech: We will start developing the 8-inch SiC process in July, with an estimated production capacity of 20000 pieces per month.

Nansha Wafer SiC Production Line Settled in Jinan

Annual production capacity may reach 1 million pieces

On June 12th, according to Shandong TV, the South Sand Wafer SiC Expansion Base project is planned to land in Jinan.

According to the official website of the New Generation Semiconductor Materials Research Institute of Shandong University, Shandong Zhongjingxinyuan, a wholly-owned subsidiary of Nansha Wafer, has recently completed its registration and will be the main constructor of the Jinan expansion base project.

Li Shuqiang, the person in charge of the Jinan expansion base of Nansha Wafer, said, "The project plans to reach full production and production by 2025, with an expected output value of over 5 billion yuan." If the price of a single substrate is 5000 yuan/piece (equivalent to 6 inches), then the annual production capacity of the project may reach 1 million pieces.http://www.ic-bom.com/

Nansha Wafer was established in September 2018 and currently has a silicon carbide project in Nansha District, Guangzhou, with a total investment of 900 million yuan. After reaching production capacity, it produces a total of 200000 substrates and epitaxial wafers per year. In July 2020, the project officially began construction; In September 2021, the main structures of the 1 #, 2 #, 3 #, and 4 # factories of the project were fully capped. According to the report of Guangzhou Daily in April, the project has been put into trial production.

In 2022, Nansha Wafer achieved a breakthrough in 8-inch silicon carbide substrate by using physical gas transport method to obtain 8-inch 4H-SiC seed crystals for 8-inch conductive 4H-SiC crystal growth, and processed them with a thickness of 520 μ 8-inch 4H SiC substrate for m.http://www.ic-bom.com/

Eastern High Tech Advance 8-inch SiC

Expected annual production capacity of 240000 pieces

On June 14th, according to Korean media reports, DB HiTek in Eastern South Korea will begin developing the 8-inch SiC process in July, and related process development equipment is expected to be put into operation within this year.

DB HiTek is a company specializing in 8-inch OEM. Previously, they had been committed to developing 6-inch SiC processes, and in the future, they will develop mass production 8-inch SiC processes based on the 6-inch process. It is reported that their target mass production time is 2028, and the production capacity is expected to be 20000 pieces per month.http://www.ic-bom.com/

They will invest in the 8-inch SiC process facility within this year, located in an idle space in DB Company‘s Sangwoo Park. Considering the preparation time of the facility (from order to delivery), DB HiTek is expected to begin fully developing the 8-inch SiC process using the facility by the end of 2024.http://www.ic-bom.com/