Transform announced the launch of its 1200 V sapphire based GaN power FET simulation model and preliminary data sheet.

The TP120H070WS FET is considered the only 1200 V sapphire based GaN power semiconductor launched to date, making its model the first of its kind.http://www.ic-bom.com/

Transform stated that the product released this time demonstrates the ability to support future automotive power systems as well as three-phase power systems commonly used in a wide range of industrial, data communication, and renewable energy markets.

Transform recently validated the higher performance of this GaN device in a 5 kW 900 V buck converter at a switching frequency of 100 kHz. The efficiency of the 1200V GaN device has reached 98.7%, exceeding the efficiency of similar rated SiC MOSFETs.http://www.ic-bom.com/

The main specifications of the TP120H070WS device include: 70 m Ω RDS (on), normally closed, efficient bidirectional current, ± 20 Vmax grid robustness, low 4V grid drive noise immunity, zero QRR and 3-pin TO-247 packaging.

It is recommended to use the Verilog-A device model with the SIMetrix Pro v8.5 circuit simulator. The LTSpice model is currently under development and will be released in the fourth quarter of 2023.