Nano Semiconductor announced the launch of the fifth generation high-speed GeneSiC silicon carbide (SiC) power diodes, suitable for demanding data centers, industrial motor drives, solar energy, and consumer applications.http://www.ic-bom.com/

It is said that this Merged PiN Schottky (MPS) diode with a rated voltage of 650 V integrates a unique PiN Schottky structure, providing "low built-in voltage bias" under all load conditions to achieve high efficiency and stability.

We are providing reliable and leading performance for applications with high demand such as artificial intelligence and Chat GPT data center power, "said Ranbir Singh, Executive Vice President of Nanomicro SiC.

The GeneSiC MPS design combines the characteristics of PiN and Schottky diode structures, producing a low forward voltage drop (VF) of only 1.3 V, high surge current capability (IFSM), and minimizing temperature independent switching losses. It is said that proprietary thin chip technology can further reduce VF and improve heat dissipation, achieving better high-temperature performance. The diode is first packaged in a flat surface mount QFN package.

The GExxMPS4x series MPS diodes have a capacity range of 4 to 24A and are packaged in a series of surface mount (QFN, D2 PAK) and through hole packaging (TO-220, TO-247), covering applications ranging from 300 to 3000 W and various circuits, such as solar panel boost converters and continuous current mode power factor correction (PFC) in gaming consoles. The TO-247-3 package adopts a "common cathode" configuration, providing flexibility for high power density and reduced material costs in an interleaved PFC topology.http://www.ic-bom.com/