Recently, Shunyi District in Beijing signed contracts to settle three silicon carbide projects, involving silicon carbide chips, substrates, equipment, and other aspects. In addition, the Henan Silicon Carbide project has officially started construction.http://www.ic-bom.com/

Guolian Wanzhong, Lattice Field, Tesidi

project signing and landing in Beijing

According to the Beijing Youth Daily, the Beijing (International) Third Generation Semiconductor Innovation and Development Forum was held on May 28. On site, Shunyi District signed six industrial projects, including Guolian Wanzhong Phase II, Lattice Field Phase II, Tesidi Semiconductor Phase II, and Mingga Semiconductor Expansion Project, with an estimated total investment of nearly 1.8 billion yuan.

According to reports, the silicon carbide projects signed this time include the second phase of Guolian Wanzhong‘s silicon carbide power chip project, the liquid phase silicon carbide substrate production project in the lattice field, and the second phase of Tesidi Semiconductor Thinning Polishing CMP equipment production project.http://www.ic-bom.com/

At present, there is no further detailed disclosure of the three signed and settled silicon carbide projects. "Experts say three and a half generations" will continue to be reported. Stay tuned!

In fact, prior to this signing, Guolian Wanzhong, lattice field, and Tesidi Semiconductor had already laid out their presence in the silicon carbide field.

Guolian Wanzhong invested over 300 million yuan to build a silicon carbide project

It is understood that as early as July 2022, Guolian Wanzhong, a subsidiary of China Electronics Technology Corporation‘s 13th Institute, publicly announced its "Key Technology Research and Development Project for Silicon Carbide High Voltage Power Module" environmental impact assessment report. It is reported that the total investment of this project is 313 million yuan, mainly researching and developing 3300V SiC MOSFET chips and 3300V high-voltage power module packaging technology. Construction was planned to start on January 1, 2023.

In addition, Guolian Wanzhong is also constructing another silicon carbide and gallium nitride related project, with main products including 6-inch SiC and GaN wafers; GaN power amplifier module; SiC power module and single transistor.http://www.ic-bom.com/

450 million yuan investment in the lattice field to expand the pilot line of liquid phase silicon carbide project

In February 2023, the expansion pilot line of the liquid phase silicon carbide project in the lattice field. It is reported that the total investment of this project is 450 million yuan, and it is a scientific and technological achievement transformation project of the Institute of Physics of the Chinese Academy of Sciences. It will be implemented in three phases. At present, the project has completed a 4-6 inch liquid phase silicon carbide substrate testing line, with an annual production capacity of 5400 pieces of silicon carbide substrates.

Tesidi Semiconductor will focus on developing 8-inch silicon carbide polishing process and equipment

In an interview with "Experts Say Three and a Half Generations", Liu Yongfeng, CEO of Tesidi Semiconductor, mentioned that their sales of polishing equipment in the silicon carbide substrate industry in 2022 increased by 300% compared to last year, with double-sided polishing equipment receiving orders from multiple large silicon carbide substrate manufacturers. At the same time, they have launched a new fully automatic thinning machine in the field of silicon carbide devices, which is compatible with 6-8 inches and improves processing efficiency by 50%. The machining accuracy and stability have been unanimously recognized by customers.